Electron injection-induced effects in Si-doped β-Ga2O3
نویسندگان
چکیده
منابع مشابه
ELECTRON - PHONON SCATTERING IN Si DOPED GaN
Phonon-plasmon scattering in non-resonant Raman spectroscopy is used to determine the free electron concentration in Si doped GaN films. For various doping concentration and variable temperature the correlation with magneto-transport data is established. The freeze-out of the carrier concentration at low temperature is thus observed in a purely optical detection scheme. We observe a very long t...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2019
ISSN: 2158-3226
DOI: 10.1063/1.5079730